SUM25P10-138-E3

new-10%

Manufacturer part number:SUM25P10-138-E3

Manufacturer:Vishay Siliconix

Description:VISHAY SUM25P10-138-E3 MOSFET Transistor, P Channel, -16.7 A, -100 V, 0.115 ohm, -10 V

Case Package:SOT-23

Datasheet:SUM25P10-138-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.75W Ta 88.2W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.8m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2110pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16.7A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Polarity/Channel Type	P-CHANNEL
Continuous Drain Current (ID)	16.7A
Drain-source On Resistance-Max	0.142Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	100V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant