SUP75P05-08-E3

new-10%

Manufacturer part number:SUP75P05-08-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 55V 75A TO220-3

Case Package:SOT-23

Datasheet:SUP75P05-08-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.7W Ta 250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Rise Time	140ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	175 ns
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	-75A
Threshold Voltage	-2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	240A
Nominal Vgs	-2 V
Height	9.01mm
Length	10.41mm
Width	4.7mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant