IRF6607 Description

The IRF6607 is an application Specific MOSFET combining the most recent HEXFET^? Power MOSFET Silicon technology with sophisticated DirectFET^TM packaging to produce the lowest on-state resistance in a SO-8 footprint and 0.7 mm profile. The DirectFET package is backwards compatible with existing power application layout geometries, PCB assembly equipment, and vapour phase, infrared, or convection soldering processes.

IRF6607 Features

• Low Conduction Losses

• High Cdv/dt Immunity

• Low Profile (<0.7 mm)

• Dual-Sided Cooling Compatible

• Compatible with existing Surface Mount Techniques

IRF6607 Applications

• CPU Core DC-DC Converters