VP0808B-E3

new-10%

Manufacturer part number:VP0808B-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 80V 0.88A TO-205

Case Package:SOT-23

Datasheet:VP0808B-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-280mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	6.25W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	880mA Ta
Rise Time	30ns
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	-3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.88A
Drain-source On Resistance-Max	5Ohm
Drain to Source Breakdown Voltage	-80V
Feedback Cap-Max (Crss)	25 pF
Height	6.6mm
Length	9.4mm
Width	8.15mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant