NJD2873RL Overview

In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Maximum collector currents can be below 2A volts.

NJD2873RL Features

the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 65MHz

NJD2873RL Applications

There are a lot of ON Semiconductor NJD2873RL applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter