BUJ100LR,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ100LR,126 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Base Part Number
BUJ100
Power - Max
2.1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 400mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067120
$0.06712
500
$0.049353
$24.6765
1000
$0.041127
$41.127
2000
$0.037732
$75.464
5000
$0.035263
$176.315
10000
$0.032803
$328.03
15000
$0.031724
$475.86
50000
$0.031194
$1559.7
BUJ100LR,126 Product Details
BUJ100LR,126 Overview
This device has a DC current gain of 10 @ 400mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 750mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BUJ100LR,126 Features
the DC current gain for this device is 10 @ 400mA 5V the vce saturation(Max) is 1.5V @ 250mA, 750mA
BUJ100LR,126 Applications
There are a lot of WeEn Semiconductors BUJ100LR,126 applications of single BJT transistors.