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BUJ100LR,126

BUJ100LR,126

BUJ100LR,126

WeEn Semiconductors

BUJ100LR,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ100LR,126 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Base Part Number BUJ100
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 400mA 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1A
RoHS StatusRoHS Compliant
In-Stock:1164 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.067120$0.06712
500$0.049353$24.6765
1000$0.041127$41.127
2000$0.037732$75.464
5000$0.035263$176.315
10000$0.032803$328.03
15000$0.031724$475.86
50000$0.031194$1559.7

BUJ100LR,126 Product Details

BUJ100LR,126 Overview


This device has a DC current gain of 10 @ 400mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 750mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BUJ100LR,126 Features


the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA

BUJ100LR,126 Applications


There are a lot of WeEn Semiconductors BUJ100LR,126 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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