BUJ302AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ302AD,118 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Base Part Number
BUJ302A
Reference Standard
IEC-60134
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 800mA 3V
Current - Collector Cutoff (Max)
250mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.880910
$2.88091
10
$2.717840
$27.1784
100
$2.564000
$256.4
500
$2.418868
$1209.434
1000
$2.281951
$2281.951
BUJ302AD,118 Product Details
BUJ302AD,118 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 800mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.
BUJ302AD,118 Features
the DC current gain for this device is 25 @ 800mA 3V the vce saturation(Max) is 1.5V @ 1A, 3.5A
BUJ302AD,118 Applications
There are a lot of WeEn Semiconductors BUJ302AD,118 applications of single BJT transistors.