BUJ403A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ403A,127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Reach Compliance Code
not_compliant
Reference Standard
IEC-134
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max)
550V
Current - Collector (Ic) (Max)
6A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.787962
$0.787962
10
$0.743360
$7.4336
100
$0.701283
$70.1283
500
$0.661588
$330.794
1000
$0.624139
$624.139
BUJ403A,127 Product Details
BUJ403A,127 Overview
This device has a DC current gain of 20 @ 500mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 2A.This device displays a 550V maximum voltage - Collector Emitter Breakdown.
BUJ403A,127 Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 1V @ 400mA, 2A
BUJ403A,127 Applications
There are a lot of WeEn Semiconductors BUJ403A,127 applications of single BJT transistors.