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BUJ403A,127

BUJ403A,127

BUJ403A,127

WeEn Semiconductors

BUJ403A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ403A,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 100W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max) 550V
Current - Collector (Ic) (Max) 6A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.787962 $0.787962
10 $0.743360 $7.4336
100 $0.701283 $70.1283
500 $0.661588 $330.794
1000 $0.624139 $624.139
BUJ403A,127 Product Details

BUJ403A,127 Overview


This device has a DC current gain of 20 @ 500mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 2A.This device displays a 550V maximum voltage - Collector Emitter Breakdown.

BUJ403A,127 Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 1V @ 400mA, 2A

BUJ403A,127 Applications


There are a lot of WeEn Semiconductors BUJ403A,127 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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