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BUJ403A,127

BUJ403A,127

BUJ403A,127

WeEn Semiconductors

BUJ403A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ403A,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 100W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max) 550V
Current - Collector (Ic) (Max) 6A
RoHS StatusRoHS Compliant
In-Stock:3610 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.787962$0.787962
10$0.743360$7.4336
100$0.701283$70.1283
500$0.661588$330.794
1000$0.624139$624.139

BUJ403A,127 Product Details

BUJ403A,127 Overview


This device has a DC current gain of 20 @ 500mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 2A.This device displays a 550V maximum voltage - Collector Emitter Breakdown.

BUJ403A,127 Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 1V @ 400mA, 2A

BUJ403A,127 Applications


There are a lot of WeEn Semiconductors BUJ403A,127 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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