PBSS4160V,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 220MHz.This device can take an input voltage of 60V volts before it breaks down.The maximum collector current is 1A volts.

PBSS4160V,115 Features

the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz

PBSS4160V,115 Applications

There are a lot of Nexperia USA Inc. PBSS4160V,115 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface