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BUJD203AX,127

BUJD203AX,127

BUJD203AX,127

WeEn Semiconductors

BUJD203AX,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJD203AX,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Base Part Number BUJD203A
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 26W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1mA 5V
Current - Collector Cutoff (Max) 2mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 425V
Current - Collector (Ic) (Max) 4A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.28350 $1.4175
BUJD203AX,127 Product Details

BUJD203AX,127 Overview


DC current gain in this device equals 10 @ 1mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1V @ 600mA, 3A means Ic has reached its maximum value(saturated).A 425V maximal voltage - Collector Emitter Breakdown is present in the device.

BUJD203AX,127 Features


the DC current gain for this device is 10 @ 1mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A

BUJD203AX,127 Applications


There are a lot of WeEn Semiconductors BUJD203AX,127 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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