PHD13003C,412

join

new-10%

Manufacturer part number:PHD13003C,412

Manufacturer:WeEn Semiconductors

Description:PHD13003C,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:PHD13003C,412 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	150°C TJ
Packaging	Bulk
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Power - Max	2.1W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 1A 2V
Current - Collector Cutoff (Max)	100μA
Vce Saturation (Max) @ Ib, Ic	1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1.5A
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.175680	$0.17568
10	$0.165736	$1.65736
100	$0.156355	$15.6355
500	$0.147504	$73.752
1000	$0.139155	$139.155

PHD13003C,412 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5 @ 1A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.