W25Q80JVSVIQ

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Manufacturer part number:W25Q80JVSVIQ

Manufacturer:Winbond Electronics

Description:SpiFlash? Memory IC SpiFlash? Series 4.9mm mm

Case Package:SOT-23

Datasheet:W25Q80JVSVIQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tube
Series	SpiFlash®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	DUAL
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	1.27mm
JESD-30 Code	R-PDSO-G8
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	8Mb 1M x 8
Memory Type	Non-Volatile
Operating Mode	SYNCHRONOUS
Clock Frequency	133MHz
Memory Format	FLASH
Memory Interface	SPI
Organization	1MX8
Memory Width	8
Write Cycle Time - Word, Page	3ms
Memory Density	8388608 bit
Parallel/Serial	SERIAL
Programming Voltage	3V
Height Seated (Max)	0.9mm
Length	4.9mm
Width	3.9mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
90	$0.34044	$30.6396

W25Q80JVSVIQ Overview

There is a Non-Volatile memory type associated with this device. You can get memory ics in a Tube case. In the case of 8-SOIC (0.154, 3.90mm Width), it is embedded within the case. The chip has an 8Mb 1M x 8 memory. As with most mainstream devices, this one uses FLASH-format memory. -40°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. The supply voltage can be up to 2.7V~3.6V. There is a recommendation that Surface Mount mounting type should be used for this product. On the chip, there are 8 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. A voltage of 3V is required for the operation of this memory device. During the rotation of the clock, the ic memory chip is set as 133MHz. Among the SpiFlash? series of memory devices, this part is essential for its applications. The programming voltage required for certain nonvolatile memory arrays is 3V.