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ALD110900APAL

ALD110900APAL

ALD110900APAL

Advanced Linear Devices Inc.

MOSFET Dual EPAD(R) N-Ch

SOT-23

ALD110900APAL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Supplier Device Package 8-PDIP
Operating Temperature 0°C~70°C TJ
Packaging Tube
Published 2005
Series EPAD®, Zero Threshold™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Max Power Dissipation 500mW
Element Configuration Dual
Power Dissipation 500mW
Power - Max 500mW
FET Type 2 N-Channel (Dual) Matched Pair
Rds On (Max) @ Id, Vgs 500Ohm @ 4V
Vgs(th) (Max) @ Id 10mV @ 1μA
Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V
Drain to Source Voltage (Vdss) 10.6V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 12mA
Gate to Source Voltage (Vgs) 10.6V
Drain to Source Breakdown Voltage 10V
Input Capacitance 2.5pF
FET Feature Standard
Drain to Source Resistance 500Ohm
Rds On Max 500 Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.142794 $7.142794
10 $6.738485 $67.38485
100 $6.357061 $635.7061
500 $5.997228 $2998.614
1000 $5.657762 $5657.762

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