IRF7304TRPBF

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Manufacturer part number:IRF7304TRPBF

Manufacturer:Infineon Technologies

Description:IRF7304TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7304TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Resistance	90mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Power Rating	2W
Voltage - Rated DC	-20V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	-4.3A
Base Part Number	IRF7304PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	8.4 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.3A
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Rise Time	26ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	51 ns
Continuous Drain Current (ID)	-4.3A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.6A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	84 ns
FET Feature	Logic Level Gate
Nominal Vgs	-700 mV
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

Quantity	Unit Price	Ext. Price

IRF7304TRPBF Description

The fifth generation HEXFET of the International Rectifier Company adopts advanced processing technology to achieve the lowest possible switch. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.

The SO-8 has been modified through a custom lead frame to enhance its thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. Multiple devices can be used in one application, greatly reducing the circuit board space. The package is designed for the vapor phase. Infrared wave soldering technology. In typical printed circuit board installation applications, it is possible to consume more than 0.8W.

IRF7304TRPBF Features

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

IRF7304TRPBF Applications

HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.