IPG20N04S4L11AATMA1

new-10%

Manufacturer part number:IPG20N04S4L11AATMA1

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 8TDSON

Case Package:SOT-23

Datasheet:IPG20N04S4L11AATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Max Power Dissipation	41W
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	41W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	11.6m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	2.2V @ 15μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0116Ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead