AOD11S60

new-10%

Manufacturer part number:AOD11S60

Manufacturer:Alpha & Omega Semiconductor Inc.

Description:MOSFET N-CH 600V 11A TO252

Case Package:SOT-23

Datasheet:AOD11S60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	aMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	399m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	4.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 100V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.399Ohm
Pulsed Drain Current-Max (IDM)	45A
DS Breakdown Voltage-Min	600V
RoHS Status	ROHS3 Compliant