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AOT11S65L

AOT11S65L

AOT11S65L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 11A TO220

SOT-23

AOT11S65L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series aMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 198W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 399m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 11A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.273556 $0.273556
10 $0.258071 $2.58071
100 $0.243463 $24.3463
500 $0.229683 $114.8415
1000 $0.216681 $216.681

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