SQM110N05-06L_GE3

new-10%

Manufacturer part number:SQM110N05-06L_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 55V 110A TO263

Case Package:SOT-23

Datasheet:SQM110N05-06L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263 (D2Pak)
Weight	1.437803g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	157W Tc
Element Configuration	Single
Power Dissipation	157W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Input Capacitance	4.44nF
Drain to Source Resistance	6mOhm
Rds On Max	6 mΩ
Nominal Vgs	2 V
Height	4.83mm
Length	10.41mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant