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AOT8N65_001

AOT8N65_001

AOT8N65_001

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 8A TO220

SOT-23

AOT8N65_001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 208W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.15Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8A
Input Capacitance 1.4nF
Rds On Max 1.15 Ω
RoHS Status RoHS Compliant

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