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AOW11S60

AOW11S60

AOW11S60

Alpha & Omega Semiconductor Inc.

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262

SOT-23

AOW11S60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 178W Tc
Power Dissipation 178W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 399mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 545pF
Rds On Max 399 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.966033 $0.966033
10 $0.911352 $9.11352
100 $0.859766 $85.9766
500 $0.811100 $405.55
1000 $0.765189 $765.189

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