IPI50N10S3L16AKSA1

new-10%

Manufacturer part number:IPI50N10S3L16AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 50A TO262-3

Case Package:SOT-23

Datasheet:IPI50N10S3L16AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.4V @ 60μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.0209Ohm
Pulsed Drain Current-Max (IDM)	200A
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead