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BSS138TA

BSS138TA

BSS138TA

Diodes Incorporated

BSS138TA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

BSS138TA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 50V
Nominal Vgs 1.5 V
Feedback Cap-Max (Crss) 8 pF
Height 1mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.45000 $0.45
500 $0.4455 $222.75
1000 $0.441 $441
1500 $0.4365 $654.75
2000 $0.432 $864
2500 $0.4275 $1068.75
BSS138TA Product Details

BSS138TA Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 10V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.This device has 50V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 50V.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.5V.Using drive voltage (10V), this device helps reduce its power consumption.

BSS138TA Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.5V

BSS138TA Applications


There are a lot of Diodes Incorporated BSS138TA applications of single MOSFETs transistors.

  • LCD/LED TV
  • Consumer Appliances
  • Power Tools
  • LCD/LED/ PDP TV Lighting
  • Power Management Functions
  • Battery Protection Circuit
  • PFC stages, hard switching PWM stages and resonant switching
  • Motor Drives and Uninterruptible Power Supples
  • Server power supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU

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