BLF888E

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Manufacturer part number:BLF888E

Manufacturer:Ampleon

Description:BLF888E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

Case Package:SOT-23

Datasheet:BLF888E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	4
Transistor Element Material	SILICON
ECCN (US)	EAR99
HTS	8541.29.00.95
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	104
Maximum Gate Source Voltage (V)	11
Maximum Gate Threshold Voltage (V)	2.25
Maximum VSWR	40
Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	120(Typ)@6V
Typical Input Capacitance @ Vds (pF)	210@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	1.35@50V
Typical Output Capacitance @ Vds (pF)	67@50V
Output Power (W)	150(Typ)
Typical Power Gain (dB)	17
Maximum Frequency (MHz)	790
Minimum Frequency (MHz)	470
Typical Drain Efficiency (%)	52
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
Supplier Package	SOT-539A
Military	No
Mounting	Screw
Package Height	4.7(Max)
Package Length	41.28(Max)
Package Width	10.29(Max)
PCB changed	5
Package Shape	RECTANGULAR
Manufacturer	NXP Semiconductors
Packaging	Bulk
Part Status	Active
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Pin Count	5
Reference Standard	IEC-60134
JESD-30 Code	R-CDFM-F4
Number of Elements	2
Configuration	Dual Common Source
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
DS Breakdown Voltage-Min	104 V
Channel Type	N
FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp)	15.3 dB
RoHS Status	RoHS Compliant