Description:

The Infineon Transistors - FETs, MOSFETs - RF PTVA101K02EVV1R0XTMA1 is a high-performance, low-noise, low-distortion, high-power RF amplifier IC. It is designed for use in a wide range of applications, including wireless communications, automotive, and industrial applications. The device features a high-efficiency, low-noise, low-distortion, high-power LDMOS H-36275-4 amplifier with a wide frequency range of up to 6 GHz.

Features:

• High-efficiency, low-noise, low-distortion, high-power LDMOS H-36275-4 amplifier
• Wide frequency range of up to 6 GHz
• High-power output of up to +36 dBm
• Low-noise figure of up to 1.5 dB
• Low-distortion of up to -60 dBc
• High-linearity of up to +30 dBm
• Low-power consumption of up to 1.5 W
• High-reliability and long-term stability

Applications:

The Infineon Transistors - FETs, MOSFETs - RF PTVA101K02EVV1R0XTMA1 is suitable for a wide range of applications, including wireless communications, automotive, and industrial applications. It is ideal for use in base station amplifiers, mobile radio systems, and other high-power RF applications.