MRF8S9260HSR5

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Manufacturer part number:MRF8S9260HSR5

Manufacturer:NXP Semiconductors

Description:MRF8S9260HSR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:MRF8S9260HSR5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Number of Pins	3
Weight	6.757591 g
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	70
Maximum Gate Source Voltage (V)	10
Maximum VSWR	7
Output Power (W)	75(Typ)
Typical Power Gain (dB)	18.8
Maximum Frequency (MHz)	960
Minimum Frequency (MHz)	865
Typical Drain Efficiency (%)	38.5
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
Supplier Package	Case 465C-02
Military	No
Mounting	Surface Mount
Package Height	5.08(Max)
Package Length	23.24(Max)
Package Width	13.8(Max)
PCB changed	3
RoHS	Compliant
Packaging	Tape and Reel
Part Status	Obsolete
Max Operating Temperature	150 °C
Min Operating Temperature	-65 °C
Frequency	1.88 GHz
Pin Count	3
Number of Elements	1
Configuration	Single
Element Configuration	Single
Output Power	72 W
Test Current	800 mA
Drain to Source Voltage (Vdss)	70 V
Gate to Source Voltage (Vgs)	10 V
Gain	16 dB
Max Frequency	960 MHz
Max Output Power	260 W
Drain to Source Breakdown Voltage	70 V
Channel Type	N
Mode of Operation	1-Carrier W-CDMA\|CDMA\|GSM
Test Voltage	30 V
Voltage Rating	65 V
RoHS Status	RoHS Compliant