Description:

The Ampleon BLF574,112 is a RF FET LDMOS (laterally diffused metal oxide semiconductor) transistor with a 110V drain-source voltage and a 26.5dB gain. It is packaged in a SOT539A surface mount package.

Features:

• High gain of 26.5dB
• High drain-source voltage of 110V
• Low noise figure of 1.5dB
• High power output of up to 50W
• High efficiency of up to 70%
• Low thermal resistance of 0.5°C/W
• Low input and output capacitance
• High frequency operation up to 4GHz

Applications:

The Ampleon BLF574,112 is suitable for a wide range of applications, including RF power amplifiers, cellular base stations, and wireless communication systems. It is also suitable for use in high power, high efficiency, and high frequency applications.