BD239B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD239B-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
HTS Code
8541.29.00.95
Max Power Dissipation
30W
Base Part Number
BD239
Pin Count
3
Element Configuration
Single
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD239B-S Product Details
BD239B-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 1A 4V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 2A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.During maximum operation, collector current can be as low as 2A volts.
BD239B-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 200mA, 1A the emitter base voltage is kept at 5V
BD239B-S Applications
There are a lot of Bourns Inc. BD239B-S applications of single BJT transistors.