Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD241C-S

BD241C-S

BD241C-S

Bourns Inc.

BD241C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD241C-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation40W
Base Part Number BD241
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage100V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4020 items

BD241C-S Product Details

BD241C-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 600mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.When collector current reaches its maximum, it can reach 3A volts.

BD241C-S Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V

BD241C-S Applications


There are a lot of Bourns Inc. BD241C-S applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News