BD241C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD241C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
40W
Base Part Number
BD241
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD241C-S Product Details
BD241C-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 600mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.When collector current reaches its maximum, it can reach 3A volts.
BD241C-S Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V
BD241C-S Applications
There are a lot of Bourns Inc. BD241C-S applications of single BJT transistors.