JANS2N4150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANS2N4150 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/394
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
70V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 5A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1A, 10A
Current - Collector (Ic) (Max)
10A
Collector Base Voltage (VCBO)
100V
Turn Off Time-Max (toff)
2000ns
Turn On Time-Max (ton)
550ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANS2N4150 Product Details
JANS2N4150 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 1A, 10A.When collector current reaches its maximum, it can reach 10A volts.
JANS2N4150 Features
the DC current gain for this device is 40 @ 5A 5V the vce saturation(Max) is 2.5V @ 1A, 10A
JANS2N4150 Applications
There are a lot of Microsemi Corporation JANS2N4150 applications of single BJT transistors.