2SD1683T Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.A collector emitter saturation voltage of 190mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.When collector current reaches its maximum, it can reach 4A volts.
2SD1683T Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683T Applications
There are a lot of ON Semiconductor 2SD1683T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
