BD242C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD242C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
40W
Base Part Number
BD242
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
3A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD242C-S Product Details
BD242C-S Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 600mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD242C-S Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V
BD242C-S Applications
There are a lot of Bourns Inc. BD242C-S applications of single BJT transistors.