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BD242C-S

BD242C-S

BD242C-S

Bourns Inc.

BD242C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD242C-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 40W
Base Part Number BD242
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Radiation Hardening No
RoHS Status ROHS3 Compliant
BD242C-S Product Details

BD242C-S Overview


In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 600mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

BD242C-S Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V

BD242C-S Applications


There are a lot of Bourns Inc. BD242C-S applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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