2SB1495,Q(J | Datasheet PDF | Toshiba Semiconductor and Storage | Transistors - Bipolar (BJT) - Single | Hotenda

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2SB1495,Q(J

Manufacturer part number:2SB1495,Q(J

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS PNP 3A 100V TO220-3

Case Package:SOT-23

Datasheet:2SB1495,Q(J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	2W
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 2A 2V
Current - Collector Cutoff (Max)	10μA ICBO
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1.5mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A

Quantity	Unit Price	Ext. Price
1	$3.788156	$3.788156
10	$3.573732	$35.73732
100	$3.371445	$337.1445
500	$3.180609	$1590.3045
1000	$3.000574	$3000.574

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