2N6517CTA Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.In this part, there is a transition frequency of 40MHz.The breakdown input voltage is 350V volts.When collector current reaches its maximum, it can reach 500mA volts.

2N6517CTA Features

the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz

2N6517CTA Applications

There are a lot of ON Semiconductor 2N6517CTA applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter