BD243A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD243A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
65W
Base Part Number
BD243
Element Configuration
Single
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
6A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD243A-S Product Details
BD243A-S Overview
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 6A.Continuous collector voltages should be kept at 6A to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Collector current can be as low as 6A volts at its maximum.
BD243A-S Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the emitter base voltage is kept at 5V
BD243A-S Applications
There are a lot of Bourns Inc. BD243A-S applications of single BJT transistors.