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BD244A-S

BD244A-S

BD244A-S

Bourns Inc.

BD244A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD244A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation65W
Base Part Number BD244
Element ConfigurationSingle
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 6A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3836 items

BD244A-S Product Details

BD244A-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1A, 6A.Continuous collector voltage should be kept at 6A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Maximum collector currents can be below 6A volts.

BD244A-S Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V

BD244A-S Applications


There are a lot of Bourns Inc. BD244A-S applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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