FJN3303FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJN3303FBU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
650mW
Terminal Position
BOTTOM
Base Part Number
FJN3303
Number of Elements
1
Configuration
SINGLE
Power - Max
650mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 500mA 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 500mA, 1.5A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Frequency - Transition
4MHz
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
14
Turn Off Time-Max (toff)
4700ns
Turn On Time-Max (ton)
1100ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.144520
$0.14452
10
$0.136340
$1.3634
100
$0.128623
$12.8623
500
$0.121342
$60.671
1000
$0.114474
$114.474
FJN3303FBU Product Details
FJN3303FBU Overview
In this device, the DC current gain is 14 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 500mA, 1.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.There is a transition frequency of 4MHz in the part.The maximum collector current is 1.5A volts.
FJN3303FBU Features
the DC current gain for this device is 14 @ 500mA 2V the vce saturation(Max) is 3V @ 500mA, 1.5A the emitter base voltage is kept at 9V a transition frequency of 4MHz
FJN3303FBU Applications
There are a lot of ON Semiconductor FJN3303FBU applications of single BJT transistors.