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FJN3303FBU

FJN3303FBU

FJN3303FBU

ON Semiconductor

FJN3303FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJN3303FBU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation650mW
Terminal Position BOTTOM
Base Part Number FJN3303
Number of Elements 1
Configuration SINGLE
Power - Max 650mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Collector Emitter Breakdown Voltage400V
Transition Frequency 4MHz
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 14
Turn Off Time-Max (toff) 4700ns
Turn On Time-Max (ton) 1100ns
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1297 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.144520$0.14452
10$0.136340$1.3634
100$0.128623$12.8623
500$0.121342$60.671
1000$0.114474$114.474

FJN3303FBU Product Details

FJN3303FBU Overview


In this device, the DC current gain is 14 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 500mA, 1.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.There is a transition frequency of 4MHz in the part.The maximum collector current is 1.5A volts.

FJN3303FBU Features


the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

FJN3303FBU Applications


There are a lot of ON Semiconductor FJN3303FBU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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