BC558BRL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC558BRL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
EUROPEAN PART NUMBER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-100mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BC558
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
360MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
360MHz
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.329170
$0.32917
10
$0.310538
$3.10538
100
$0.292960
$29.296
500
$0.276377
$138.1885
1000
$0.260733
$260.733
BC558BRL1 Product Details
BC558BRL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 5V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 360MHz.A maximum collector current of 100mA volts can be achieved.
BC558BRL1 Features
the DC current gain for this device is 180 @ 2mA 5V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 360MHz
BC558BRL1 Applications
There are a lot of ON Semiconductor BC558BRL1 applications of single BJT transistors.