BD245B-S Overview

This device has a DC current gain of 20 @ 3A 4V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 2.5A, 10A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

BD245B-S Features

the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V

BD245B-S Applications

There are a lot of Bourns Inc. BD245B-S applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver