BD545C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD545C-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
3.5W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD545
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
85W
Case Connection
COLLECTOR
Power - Max
3.5W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 10A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1V @ 2A, 10A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD545C-S Product Details
BD545C-S Overview
This device has a DC current gain of 10 @ 10A 4V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BD545C-S Features
the DC current gain for this device is 10 @ 10A 4V the vce saturation(Max) is 1V @ 2A, 10A the emitter base voltage is kept at 5V
BD545C-S Applications
There are a lot of Bourns Inc. BD545C-S applications of single BJT transistors.