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BD546A-S

BD546A-S

BD546A-S

Bourns Inc.

BD546A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD546A-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BD546
Polarity PNP
Element Configuration Single
Power - Max 3.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 10A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1V @ 2A, 10A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 15A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
BD546A-S Product Details

BD546A-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 10A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 2A, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.This product comes in a SOT-93 device package from the supplier.The device has a 60V maximal voltage - Collector Emitter Breakdown.Maximum collector currents can be below 15A volts.

BD546A-S Features


the DC current gain for this device is 10 @ 10A 4V
the vce saturation(Max) is 1V @ 2A, 10A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

BD546A-S Applications


There are a lot of Bourns Inc. BD546A-S applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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