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JANTXV2N2432A

JANTXV2N2432A

JANTXV2N2432A

Microsemi Corporation

JANTXV2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N2432A Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/313
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 300mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 300mW
Case Connection COLLECTOR
Transistor Application CHOPPER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 0.15mV @ 500μA, 10V
Transition Frequency 20MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 18V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N2432A Product Details

JANTXV2N2432A Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 0.15mV @ 500μA, 10V.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 18V.20MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 100mA volts.

JANTXV2N2432A Features


the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 0.15mV @ 500μA, 10V
the emitter base voltage is kept at 18V
a transition frequency of 20MHz

JANTXV2N2432A Applications


There are a lot of Microsemi Corporation JANTXV2N2432A applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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