JANTXV2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N2432A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/313
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Transistor Application
CHOPPER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
0.15mV @ 500μA, 10V
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
18V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N2432A Product Details
JANTXV2N2432A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 0.15mV @ 500μA, 10V.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 18V.20MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 100mA volts.
JANTXV2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V the vce saturation(Max) is 0.15mV @ 500μA, 10V the emitter base voltage is kept at 18V a transition frequency of 20MHz
JANTXV2N2432A Applications
There are a lot of Microsemi Corporation JANTXV2N2432A applications of single BJT transistors.