BC368ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC368ZL1G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Transition Frequency
65MHz
Frequency - Transition
65MHz
RoHS Status
ROHS3 Compliant
BC368ZL1G Product Details
BC368ZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.In this part, there is a transition frequency of 65MHz.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
BC368ZL1G Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A a transition frequency of 65MHz
BC368ZL1G Applications
There are a lot of Rochester Electronics, LLC BC368ZL1G applications of single BJT transistors.