BD651-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD651-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
2W
Base Part Number
BD651
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 50mA, 5A
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD651-S Product Details
BD651-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 50mA, 5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A maximum collector current of 8A volts is possible.
BD651-S Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2.5V @ 50mA, 5A the emitter base voltage is kept at 5V
BD651-S Applications
There are a lot of Bourns Inc. BD651-S applications of single BJT transistors.