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BD651-S

BD651-S

BD651-S

Bourns Inc.

BD651-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD651-S Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 2W
Base Part Number BD651
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Radiation Hardening No
RoHS Status ROHS3 Compliant
BD651-S Product Details

BD651-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 50mA, 5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A maximum collector current of 8A volts is possible.

BD651-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V

BD651-S Applications


There are a lot of Bourns Inc. BD651-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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