BD745C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD745C-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Base Part Number
BD745
Polarity
NPN
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 5A, 20A
Collector Emitter Breakdown Voltage
110V
Voltage - Collector Emitter Breakdown (Max)
110V
Current - Collector (Ic) (Max)
20A
RoHS Status
ROHS3 Compliant
BD745C-S Product Details
BD745C-S Overview
DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in the supplier's device package SOT-93.Collector Emitter Breakdown occurs at 110VV - Maximum voltage.When collector current reaches its maximum, it can reach 20A volts.
BD745C-S Features
the DC current gain for this device is 20 @ 5A 4V the vce saturation(Max) is 3V @ 5A, 20A the supplier device package of SOT-93
BD745C-S Applications
There are a lot of Bourns Inc. BD745C-S applications of single BJT transistors.