2N3905TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N3905TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Turn Off Time-Max (toff)
260ns
Turn On Time-Max (ton)
70ns
RoHS Status
ROHS3 Compliant
2N3905TF Product Details
2N3905TF Overview
DC current gain in this device equals 50 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3905TF Features
the DC current gain for this device is 50 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA
2N3905TF Applications
There are a lot of Rochester Electronics, LLC 2N3905TF applications of single BJT transistors.