BD244C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD244C-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
65W
Base Part Number
BD244
Number of Elements
1
Element Configuration
Single
Power Dissipation
65W
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
6A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD244C-S Product Details
BD244C-S Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 1A, 6A means Ic has reached its maximum value(saturated).A constant collector voltage of 6A is necessary for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Maximum collector currents can be below 6A volts.
BD244C-S Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the emitter base voltage is kept at 5V
BD244C-S Applications
There are a lot of Bourns Inc. BD244C-S applications of single BJT transistors.