BDV64C-S Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.Supplier device package SOT-93 comes with the product.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
BDV64C-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV64C-S Applications
There are a lot of Bourns Inc. BDV64C-S applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
