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BDV64C-S

BDV64C-S

BDV64C-S

Bourns Inc.

BDV64C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BDV64C-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BDV64
Number of Elements 1
Polarity PNP
Voltage 120V
Element Configuration Single
Current 12A
Power - Max 3.5W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Collector Emitter Breakdown Voltage 120V
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 12.2mm
Length 15.2mm
Width 4.9mm
RoHS Status ROHS3 Compliant
BDV64C-S Product Details

BDV64C-S Overview


In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.Supplier device package SOT-93 comes with the product.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.

BDV64C-S Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

BDV64C-S Applications


There are a lot of Bourns Inc. BDV64C-S applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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