BDV65A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.SOT-93 is the supplier device package for this product.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Collector current can be as low as 12A volts at its maximum.
BDV65A-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV65A-S Applications
There are a lot of Bourns Inc. BDV65A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
