BDW23A-S Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 60mA, 6A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Maximum collector currents can be below 6A volts.

BDW23A-S Features

the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 60mA, 6A
the emitter base voltage is kept at 5V

BDW23A-S Applications

There are a lot of Bourns Inc. BDW23A-S applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface