BDW63B-S Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 60mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 6A volts.

BDW63B-S Features

the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 60mA, 6A
the emitter base voltage is kept at 5V

BDW63B-S Applications

There are a lot of Bourns Inc. BDW63B-S applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter